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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1918
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1918 is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.32 +0.1 -0.05
0.65-0.15
+0.1
0.16+0.1 -0.06
2.8 0.2
6
5
4
1.5
FEATURES
* 4.0 V drive available * Low on-state resistance RDS(on)1 = 143 m MAX. (VGS = -10 V, ID = -2.0 A) RDS(on)2 = 179 m MAX. (VGS = -4.5 V, ID = -2.0 A) RDS(on)3 = 190 m MAX. (VGS = -4.0 V, ID = -2.0 A)
0 to 0.1
1 2 3
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 0.2
ORDERING INFORMATION
PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type)
1, 2, 5, 6 : Drain 3 : Gate 4 : Source
PA1918TE
Marking: TS
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TA = 25C) Drain Current (pulse)
Note1
EQUIVALENT CIRCUIT
-60 m20 m3.5 m14 0.2 2.0 150 -55 to +150 V V A A W W C C
Gate Protection Diode Gate Body Diode Drain
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board, t 5 sec.
Note2
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G15926EJ1V0DS00 (1st edition) Date Published June 2002 NS CP(K) Printed in Japan
(c)
2002
PA1918
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = -48 V VGS = -10 V ID = -3.5 A IF = 3.5 A, VGS = 0 V TEST CONDITIONS VDS = -60 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = -10 V, ID = -1.0 mA VDS = -10 V, ID = -2.0 A VGS = -10 V, ID = -2.0 A VGS = -4.5 V, ID = -2.0 A VGS = -4.0 V, ID = -2.0 A VDS = -10 V VGS = 0 V f = 1.0 MHz VDD = -30 V, ID = -2.0 A VGS = -10 V RG = 10 -1.5 3.0 -1.9 6.2 114 134 142 666 120 58 12 5 58 27 12 1.5 3.5 0.87 143 179 190 MIN. TYP. MAX. -1.0 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V
m10
-2.5
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL VGS PG. RG
Wave Form
VGS(-)
0 10% VGS 90%
IG = -2 mA 50
RL VDD
VDD
PG.
90%
VDS(-)
90% 10% 10%
VGS(-) 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
2
Data Sheet G15926EJ1V0DS
PA1918
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
120 2.25
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
100 80 60 40 20 0 0 25 50 75 100 125 150 175
PT - Total Power Dissipation - W
2 1.75 1.5 1.25 1 0.75 0.5 0.25 0 0 25 50 75 100 125 150 175
TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA
TA - Ambient Temperature - C
-100 RDS(on) Limited (VGS = -10 V)
ID - Drain Current - A
PW = 100 s ID(pulse) 1 ms
-10
-1
ID(DC) 10 ms 100 ms 5s
-0.1
Single Pulse Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm -1 -10 -100
-0.01 -0.1
VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W
1000 Single Pulse W ithout board 100
10
Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm
1
1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s
Data Sheet G15926EJ1V0DS
3
PA1918
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS
-15 Pulsed
ID - Drain Current - A
-100 VGS = -10 V
ID - Drain Current - A
-12 -4.5 V -4.0 V -6
-10 -1 -0.1 -0.01 -0.001 -0.0001
VDS = -10 V Pulsed TA = 125C 75C 25C -25C
-9
-3
0 0 -0.5 -1 -1.5 -2
VDS - Drain to Source Voltage - V
0
-1
-2
-3
-4
-5
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
-2.4
VGS(off) - Gate Cut-off Voltage - V
100 VDS = -10 V Pulsed 10 TA = -25C 25C 75C 125C
VDS = -10 V ID = -1.0 mA -2
1
-1.6
0.1
-1.2 -50 0 50 100 150
Tch - Channel Temperature - C
0.01 -0.01
-0.1
-1
-10
-100
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
300 VGS = -10 V Pulsed 250 TA = 125C 200 75C 150 25C 100 -25C 50 -0.01
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
300 VGS = -4.5 V Pulsed TA = 125C
250
200
75C 25C -25C
150
100
-0.1
-1
-10
-100
50 -0.01
-0.1
-1
-10
-100
ID - Drain Current - A
ID - Drain Current - A
Data Sheet G15926EJ1V0DS
4
PA1918
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
300 VGS = -4.0 V Pulsed 250 75C 200 25C 150 -25C 100 TA = 125C
250 Pulsed 200
150 ID = -2.0 A 100
50 -0.01
50 0 -5 -10 -15 -20
VGS - Gate to Source Voltage - V
-0.1
-1
-10
-100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - m
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
250
Ciss, Coss, Crss - Capacitance - pF
10000 ID = -2.0 A Pulsed VGS = 0 V f = 1.0 MHz
200
VGS = -4.0 V
1000
Ciss
150
-4.5 V
100
-10 V
100 Crss
Coss
50 -50 0 50 100 150
Tch - Channel Temperature - C
10 -0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns
VDD = -30 V VGS = -10 V RG = 10 100 td(off) tf 10 td(on) tr
-12 ID = -3.5 A -10 -8 -6 -4 -2 0 VDD = -48 V -30 V -15 V
1 -0.01
-0.1
-1
-10
0
3
6
9
12
15
ID - Drain Current - A
QG - Gate Charge - nC
Data Sheet G15926EJ1V0DS
5
PA1918
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100 Pulsed
IF - Diode Forward Current - A
10
1
VGS = 0 V
0.1
0.01 0.4 0.6 0.8 1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
6
Data Sheet G15926EJ1V0DS
PA1918
[MEMO]
Data Sheet G15926EJ1V0DS
7
PA1918
* The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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